UltraCMOS^® SPDT RF switch flip chip die

Until now, rad tolerant 60 GHz switch technology has only been available for less rigorous commercial application requirements. The TDSW0602T is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. It delivers low insertion loss, fast switching time and high isolation in the operating temperature of –55°C to +125°C. It is ideal for applications that require extended temperature support within this range, such as harsh industrial applications. At 50 GHz, the TDSW0602T exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors are required if dc voltage is not present on the RF ports.

 

This new RF switch is manufactured on UltraCMOS® process, a patented variation of Silicon-on-Insulator (SOI) technology that delivers the performance of GaAs with the economy and integration of conventional CMOS. and is available as flip chip die. The SOI process has space-flight heritage and is TID radiation tolerant to 50 krad and immune to SEL (Single Event Latchup), making it a viable choice for satellites and other high-altitude, high reliability applications. This product leverages monolithic microwave integrated circuit (MMIC) design techniques that deliver unprecedented performance in the K and Ka microwave and millimeter-wave bands for customers. The element evaluation is performed per wafer, per MIL-PRF-38534 Class K.